InGaAsSb/GaSb lasers and photodetectors integrated on a silicon-on-insulator waveguide circuit for spectroscopic applications

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GaSb-based integrated lasers and photodetectors on a silicon-on-insulator waveguide circuit for sensing applications in the shortwave infrared

We report our results on GaSb photodiodes and lasers integrated on a Silicon-On-Insulator waveguide circuit. The photodiodes operate at room temperature with 0.4A/W responsivity for grating-assisted coupling and >1 A/W for an evanescent design. On the other hand, integrated Fabry-Perot lasers operate in continuous wave at room temperature with a threshold current of 49.7mA

Integrated thin-film GaSb-based Fabry-Perot lasers: towards a fully integrated spectrometer on a SOI waveguide circuit

Several molecules of interest have their absorption signature in the mid-infrared. Spectroscopy is commonly used for the detection of these molecules, especially in the short-wave infrared (SWIR) region due to the low water absorption. Conventional spectroscopic systems consist of a broadband source, detector and dispersive components, making them bulky and difficult to handle. Such systems cannot be used in applications where small footprint and low power consumption is critical, such as portable gas sensors and implantable blood glucose monitors. Silicon-On-Insulator (SOI) offers a compact, low-cost photonic integrated circuit platform realized using CMOS fabrication technology. On the other hand, the GaSb material system allows the realization of high performance SWIR lasers and detectors. Integration of GaSb active components on SOI could therefore result in a compact and low power consumption integrated spectroscopic system. In this paper, we report the study on thin-film GaSb Fabry-Perot lasers integrated on a carrier substrate. The integration is achieved by using an adhesive polymer (DVS-BCB) as the bonding agent. The lasers operate at room temperature at 2.02 mu m. We obtain a minimum threshold current of 48.9mA in the continuous wave regime and 27.7mA in pulsed regime. This yields a threshold current density of 680A/cm(2) and 385A/cm(2), respectively. The thermal behaviour of the device is also studied. The lasers operate up to 35 degrees C, due to a 323 K/W thermal resistanc

Silicon-on-insulator spectrometers with integrated GaInAsSb photodiode array for wideband operation from 1500 to 2300 nm

Four echelle-type spectrometers with heterogeneously integrated GaInAsSb photodetectors on a silicon-on-insulator chip is realized. The operating wavelengths stretch from 1500 to 2300 nm. A maximum channel crosstalk of -10 dB, dark current of -2.5 mu A and responsivity of 0.61 A/W at 1530 nm and 0.7 A/W at 2200 nm were obtained

GeSn/Ge heterostructure short-wave infrared photodetectors on silicon

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Silicon-on-insulator spectrometers with integrated GaInAsSb photodiodes for wide-band spectroscopy from 1510 to 2300 nm

International audienc